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MTW14N50E

ON Semiconductor
Part Number MTW14N50E
Manufacturer ON Semiconductor
Description Power MOSFET
Published Feb 27, 2006
Detailed Description MTW14N50E Preferred Device Power MOSFET 14 Amps, 500 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced te...
Datasheet PDF File MTW14N50E PDF File

MTW14N50E
MTW14N50E

Overview
MTW14N50E Preferred Device Power MOSFET 14 Amps, 500 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time.
In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain−to−source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Robust High Voltage Termination • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Tem...


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