DatasheetsPDF.com

IRFR3707ZPBF

International Rectifier
Part Number IRFR3707ZPBF
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Feb 28, 2006
Detailed Description m o .c U 4 t e e h S a at Applications Frequency Synchronous Buck .D High Converters for Computer Processor Power w w Hi...
Datasheet PDF File IRFR3707ZPBF PDF File

IRFR3707ZPBF
IRFR3707ZPBF

Overview
m o .
c U 4 t e e h S a at Applications Frequency Synchronous Buck .
D High Converters for Computer Processor Power w w High Frequency Isolated DC-DC w Converters with Synchronous Rectification l l l PD - 95443A IRFR3707ZPbF IRFU3707ZPbF HEXFET® Power MOSFET for Telecom and Industrial Use Lead-Free Benefits l Very Low RDS(on) at 4.
5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings VDS VGS ID @ TC = 25°C IDM ID @ TC = 100°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Thermal Resistance RθJC RθJA RθJA m o .
c U 4 t e e h S a t a .
D w w w 30V 9.
5m: D-Pak IRFR3707Z Parameter Max.
30 ± 20 Drain-to-Source Voltage Gate-to-Source Voltage V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 56 39 VDSS RDS(on) max Qg 9.
6nC I-Pak IRFU3707Z Units ™ f f A 220 50 25 Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and W 0.
33 -55 to + 175 W/°C °C Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.
6mm from case) Parameter Typ.
––– ––– ––– Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient gà Notes  through … are on page 11 www.
irf.
com m o .
c U 4 t e e h S a 1 at .
D w w w Max.
3.
0 50 Units °C/W 110 12/6/04 IRFR/U3707ZPbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Tu...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)