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60T03H

Silicon Standard
Part Number 60T03H
Manufacturer Silicon Standard
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Mar 2, 2006
Detailed Description SSM60T03H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge Simple drive requirement Fast switching Description...
Datasheet PDF File 60T03H PDF File

60T03H
60T03H

Overview
SSM60T03H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge Simple drive requirement Fast switching Description D G S BV DSS R DS(ON) ID 30V 12mΩ 45A The SSM60T03H is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters.
The through-hole version, the SSM60T03J in TO-251, is available for low-footprint vertical mounting.
These devices are manufactured with an advanced process, providing improved on-resistance and switching performance.
The devices have a maximum junction temperature rating of 175°C for improved thermal margin and reliability.
G D S TO-252 (H) G D S TO-251 (J) Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C EAS TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Der...


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