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TC2696

Part Number	TC2696
Manufacturer	Transcom
Description	2 W Flange Ceramic Packaged PHEMT GaAs Power FETs
Published	Mar 3, 2006
Detailed Description	TRANSCOM TC2696 Preliminary 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs FEATURES • • • • • • • • • 2 W Typical Out...
Datasheet	TC2696 PDF File

Overview

...put Power at 2.
45 GHz 14 dB Typical Linear Power Gain at 2.
45 GHz High Linearity: IP3 = 43 dBm Typical at 2.
45 GHz High Power Added Efficiency: Nominal PAE of 43 % at 2.
45 GHz Suitable for High Reliability Application Breakdown Voltage: BVDGO ≥ 18 V Lg = 0.
6 µm, Wg = 5 mm 100 % DC Tested Flange Ceramic Package PHOTO ENLARGEMENT January 2002 DESCRIPTION The TC2696 is packaged with the TC1606 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip.
The flange ceramic package provides the best thermal conductivity for the GaAs FET.
All devices are 100% DC and RF tested to assure consistent quality.
Typical applications include high dynamic range power amplifier for commercial application...

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