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TC2623

United Monolithic Semiconductors
Part Number TC2623
Manufacturer United Monolithic Semiconductors
Description 12GHz Super Low Noise HEMT / AlGaAs/GaAs Field Effect Transistor
Published Mar 22, 2014
Detailed Description TC2623 12GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The TC2623 is a X/Ku band Schottky bar...
Datasheet PDF File TC2623 PDF File

TC2623
TC2623

Overview
TC2623 12GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The TC2623 is a X/Ku band Schottky barrier High Electron Mobility Transistor.
This device is based on a 0.
25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with a SI3N4 layer.
It is mounted in a 70mils hermetic ceramicmetal package, easy to match at X band.
It is available in the BMH204 package and in chip form.
4 2 1 3 Main Features § 0.
3dB minimum noise figure @ 5GHz § 0.
65dB minimum noise figure @ 12GHz § 14dB associated gain @ 5GHz § 10.
5dB associated gain @ 12GHz 1 : Gate 2 : Source 3 : Drain 4 : Source Main Characteristics Tamb = +25°C Symbol Idss NFmin Ga Parameter Saturated drain current Minimum noise figure Associated gain 13 Min 10 Typ 30 0.
3 14 Max 60 0.
55 Unit mA dB dB ESD Protections: Electrostatic discharge sensitive device observe handling precautions! Ref.
: DSTC26237003 Specifications subject to change without notice United Monolithic Semiconductors...


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