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MSA-2111

Hewlett-Packard
Part Number MSA-2111
Manufacturer Hewlett-Packard
Description Cascadable Silicon Bipolar MMIC Amplifier
Published Mar 3, 2006
Detailed Description Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-2111 Features • Cascadable 50 Ω Gain Block • Medium Power:...
Datasheet PDF File MSA-2111 PDF File

MSA-2111
MSA-2111

Overview
Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-2111 Features • Cascadable 50 Ω Gain Block • Medium Power: 10 dBm at 900 MHz • High Gain: 16.
5 dB Typical at 900 MHz • Low Noise Figure: 3.
3 dB Typical at 900 MHz • Low Cost Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1] Note: 1.
Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.
” Description The MSA-2111 is a low cost silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a surface mount plastic SOT-143 package.
This MMIC is designed for use as a general purpose 50 Ω gain block.
Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications.
The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability.
The use of an external bias resistor for temperature and current stability also allows bias flexibility.
SOT-143 Package Typical Biasing Configuration R bias VCC > 5 V RFC (Optional) C block IN MSA C block OUT Vd = 3.
6 V 2 MSA-2111 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 40 mA 125 mW +13 dBm 150°C –65°C to 150°C Thermal Resistance[2]: θjc = 505°C/W Notes: 1.
Permanent damage may occur if any of these limits are exceeded.
2.
TCASE = 25°C.
3.
Derate at 2.
0 mW/°C for TC > 85°C.
Electrical Specifications[1], TA = 25°C Symbol GP ∆G P f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions: Id = 29 mA, ZO = 50 Ω Power Gain (|S 21| 2) f = 900 MHz f = 0.
1 to 0.
3 GHz f = 0.
1 to 2.
5 GHz f = 0.
1 to 2.
5 GHz f = 900 MHz f = 900 MHz f = 900 MHz f = 900 MHz Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Ω Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Del...


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