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MSA-0186

Hewlett-Packard
Part Number MSA-0186
Manufacturer Hewlett-Packard
Description Cascadable Silicon Bipolar MMIC Amplifier
Published Mar 3, 2006
Detailed Description Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0186 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwid...
Datasheet PDF File MSA-0186 PDF File

MSA-0186
MSA-0186

Overview
Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0186 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 0.
9 GHz • High Gain: 17.
5 dB Typical at 0.
5 GHz • Unconditionally Stable (k>1) • Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1] Description The MSA-0186 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package.
This MMIC is designed for use as a general purpose 50 Ω gain block.
Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications.
86 Plastic Package The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, Note: silicon bipolar MMIC process 1.
Refer to PACKAGING section “Tapewhich uses nitride self-alignment, and-Reel Packaging for Semiconductor Devices”.
ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability.
The use of an external bias resistor for temperature and current stability also allows bias flexibility.
Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5 V 2 5965-9694E 6-262 MSA-0186 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 40 mA 200 mW +13 dBm 150°C –65 to 150°C Thermal Resistance[2,4]: θjc = 115°C/W Notes: 1.
Permanent damage may occur if any of these limits are exceeded.
2.
TCASE = 25°C.
3.
Derate at 8.
7 mW/°C for TC > 127°C.
4.
See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C Symbol GP ∆G P f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions: Id = 17 mA, ZO = 50 Ω Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Ω Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Tem...


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