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H5N5001FM

Part Number	H5N5001FM
Manufacturer	Hitachi
Description	Silicon N-Channel MOSFET
Published	Mar 13, 2006
Detailed Description	H5N5001FM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1380 (Z) 1st. Edition Mar. 2001 Features • • • •...
Datasheet	H5N5001FM PDF File

Overview

H5N5001FM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1380 (Z) 1st.
Edition Mar.
2001 Features • • • • • Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings : RDS(on) =1.
1 Ω typ.
: I DSS =1 µA max (at VDS = 500 V) : tf = 15ns typ (at VGS = 10 V, V DD = 250 V, I D = 2.
5 A) : Qg = 15nC typ (at VDD = 400 V, V GS = 10 V, I D = 5 A) Outline TO–220FM w w .
D w G t a D S S a e h t e U 4 .
c m o 1 2 1.
Gate 2.
Drain 3.
Source 3 w w w .
D a S a t e e h U 4 t m o .
c H5N5001FM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Note: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C 3.
Tch ≤150°C Symbol VDSS VGSS ID I D(pulse) I DR I DR(pulse) I AP Note3 ...

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H5N5001FM Silicon N-Channel MOSFET - Hitachi

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