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EDE5108AGSE

Part Number	EDE5108AGSE
Manufacturer	Elpida Memory
Description	(EDE510xAGSE) 512M bits DDR2 SDRAM
Published	Mar 13, 2006
Detailed Description	PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5104AGSE (128M words × 4 bits) EDE5108AGSE (64M words × 8 bits) Descript...
Datasheet	EDE5108AGSE PDF File

Overview

PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5104AGSE (128M words × 4 bits) EDE5108AGSE (64M words × 8 bits) Description The EDE5104AGSE is a 512M bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 4 banks.
The EDE5108AGSE is a 512M bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 4 banks.
They are packaged in 60-ball FBGA (µBGA) package.
Features • Power supply: VDD, VDDQ = 1.
8V ± 0.
1V • Double-data-rate architecture: two data transfers per clock cycle • Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver • DQS is edge aligned with data for READs: centeraligned with data for WRITEs • Differential clock inputs (CK and /CK) • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge: data and data mask referenced to both edges of DQS • Four internal banks for concurrent operation • Data mask (DM) for write data • Burst lengths: 4, 8 • /CAS Latenc...

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EDE5108AGBG 512M bits DDR2 SDRAM - Elpida Memory
EDE5108AGSE (EDE510xAGSE) 512M bits DDR2 SDRAM - Elpida Memory

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