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HN29V1G91T-30

Renesas Technology
Part Number HN29V1G91T-30
Manufacturer Renesas Technology
Description 128M X 8-bit AG-AND Flash Memory
Published Mar 16, 2006
Detailed Description HN29V1G91T-30 128M × 8-bit AG-AND Flash Memory REJ03C0056-0400Z Rev. 4.00 Jul.20.2004 Description The HN29V1G91 series ...
Datasheet PDF File HN29V1G91T-30 PDF File

HN29V1G91T-30
HN29V1G91T-30

Overview
HN29V1G91T-30 128M × 8-bit AG-AND Flash Memory REJ03C0056-0400Z Rev.
4.
00 Jul.
20.
2004 Description The HN29V1G91 series achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous multi level cell Flash memory, using 0.
13µm process technology and AG-AND (Assist GateAND) type Flash memory cell using multi level cell technology provides both the most cost effective solution and high speed programming.
Features • On-board single power supply: VCC = 2.
7 V to 3.
6 V • Operation Temperature range: Ta = 0 to +70°C • Memory organization  Memory array: (2048+64) bytes × 16384 page × 4 Bank  Page size: (2048+64) bytes  Block size: (2048+64) bytes × 2 page  Page Registe...


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