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K3N4C1000D-DC

Part Number	K3N4C1000D-DC
Manufacturer	Samsung Electronics
Description	8M-Bit CMOS Mask ROM
Published	Mar 21, 2006
Detailed Description	K3N4C1000D-D(G)C 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES • Switchable organization 1,048,576 x 8(byte mode) 524,28...
Datasheet	K3N4C1000D-DC PDF File

Overview

K3N4C1000D-D(G)C 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(Max.
) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.
) Standby : 50µA(Max.
) • Fully static operation • All inputs and outputs TTL compatible • Three state outputs • Package -.
K3N4C1000D-DC : 42-DIP-600 -.
K3N4C1000D-GC : 44-SOP-600 CMOS MASK ROM GENERAL DESCRIPTION The K3N4C1000D-D(G)C is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x 8 bit(byte mode) or as 524,288 x16 bit(word mode) depending on BHE voltage level.
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