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IRFZ34N

Part Number	IRFZ34N
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Mar 23, 2006
Detailed Description	PD - 94807 Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Sw...
Datasheet	IRFZ34N PDF File

Overview

PD - 94807 Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Lead-Free IRFZ34NPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.
040Ω G ID = 29A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-indus...

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