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TC55V040AFT

Part Number	TC55V040AFT
Manufacturer	Toshiba
Description	8-Bit FULL CMOS SRAM
Published	Mar 23, 2006
Detailed Description	TC55V040AFT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM ...
Datasheet	TC55V040AFT PDF File

Overview

TC55V040AFT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V040AFT is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits.
Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.
3 to 3.
6 V power supply.
Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz and a minimum cycle time of 55 ns.
It is automatically placed in low-power mode at 0.
5 µA standby current (at VDD = 3 V, Ta = 25°C, maximum) when chip enable ( CE1 ) is asserted high or (CE2) is asserted low.
There are three contr...

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