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SM018

Crossmos
Part Number SM018
Manufacturer Crossmos
Description CMOS Gate Array
Published Mar 23, 2006
Detailed Description C-MOS Gate-Array SM018 DESCRIPTION The SM018 is a semicustom masterchip built in a single metal C-MOS technology. The ma...
Datasheet PDF File SM018 PDF File

SM018
SM018

Overview
C-MOS Gate-Array SM018 DESCRIPTION The SM018 is a semicustom masterchip built in a single metal C-MOS technology.
The main application of this component array is to realize mixed-signal ASICs (Application Specific Integrated Circuits) of small complexity in a very short development time and with very low development costs.
The chip contains different active and passive components which can be interconnected by a single customized metal mask.
The larger part of the SM018 has a gate-array structure which can be used for digital circuits as well as for numerous analog functions.
Some high value resistors allow to control low current sources.
Zener diodes and matched transistors are completing the range of possibilities.
The available components, the low threshold voltage and the high breakdown voltage of the employed C-MOS process make the SM018 specially suited to build high voltage, high noise immunity and low current circuits.
FEATURES • Active components: 180 transistor pairs for use in analog or digital functions (N-MOS and P-MOS) • Passive components: diodes, low and high value resistors, zener diodes • 27 input/output cells • Programmable by a single metal mask Very flexible wiring possibilities • Processed with the proven Metal-gate technology of SEMEFAB (4'000 serie) • Supply voltage range: 0.
9V to 18V • High noise immunity Ideal for industrial environment • Medium speed operation: min.
5MHz toggle frequency at V DD = 4.
5V • Small chip size: 88mils x 92mils (2.
3mm x 2.
4mm) • Encapsulation in SO16 package possible Phone: LAYOUT +41 32 753 6272 +41 32 753 6109 info@crossmos.
ch www.
crossmos.
ch October 2004 LTD Rue de la Gare 15b CH-2074 Marin Switzerland Fax: Mail: Web: Page 1 www.
DataSheet4U.
com C-MOS Gate-Array SM018 SHORT PROCESS DESCRIPTION • P-well metal-gate C-MOS process • Low ohmic diffusions on substrate and well guarantie a latch-up free circuit behaviour • 6µm feature size • High breakdown voltages and channel stoppers around all transistors a...


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