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TC58256AFTI

Toshiba
Part Number TC58256AFTI
Manufacturer Toshiba
Description CMOS NAND EPROM
Published Mar 24, 2006
Detailed Description TC58256AFTI TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 256-MBIT (32M × 8 BITS) CMOS NAND E PR...
Datasheet PDF File TC58256AFTI PDF File

TC58256AFTI
TC58256AFTI

Overview
TC58256AFTI TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 256-MBIT (32M × 8 BITS) CMOS NAND E PROM DESCRIPTION The TC58256A is a single 3.
3 V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 2048 blocks.
The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments.
The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes × 32 pages).
The TC58256A is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.
The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data stor...


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