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SDP60N03L

SamHop Microelectronics
Part Number SDP60N03L
Manufacturer SamHop Microelectronics
Description N-Channel Logic Level E nhancement Mode Field E ffect Transistor
Published Mar 25, 2006
Detailed Description S DP /B 60N03L S amHop Microelectronics C orp. May,2004 ver1.1 N-Channel Logic Level E nhancement Mode Field E ffect Tr...
Datasheet PDF File SDP60N03L PDF File

SDP60N03L
SDP60N03L

Overview
S DP /B 60N03L S amHop Microelectronics C orp.
May,2004 ver1.
1 N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S S uper high dense cell design for extremely low R DS (ON).
High power and current handling capability.
TO-220 & TO-263 package.
ID 56A R DS (on) ( m W ) Max 11 @ V G S = 10V 19 @ V G S = 4.
5V D D G D S G S G S DP S E R IE S TO-220 S DB S E R IE S TO-263(DD-P AK) S ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed a S ymbol V DS V GS @ TJ=125 C ID IDM IS PD T J , T S TG Limit 30 20 56 168 60 75 -65 to 175 Unit V V A A A W C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient www.
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5 C /W C /W 62.
5 S DP /B 60N03L E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) 4 Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS b Condition V GS = 0V, ID = 250uA V DS = 24V, V GS =0V V GS = 16V, V DS = 0V V DS = V GS , ID = 250uA V GS = 10V, ID = 30A V GS = 4.
5V, ID = 24A V GS = 10V, V DS = 10V V DS = 10V, ID = 26A Min Typ Max Unit 30 10 100 V uA nA V ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 1 1.
5 9.
5 16 60 32 1200 550 160 V DD = 15V, ID = 1A, V GS = 10V, R GE N =60 ohm V DS =15V,ID =30A,V GS =10V V DS =15V,ID =30A,V GS =4.
5V V DS =15V, ID = 30A, V GS =10V 2 3 11 m ohm 19 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS b Input Capacitance Output Capacitance R everse Transfer Capacitance V DS =15V, V GS = 0V f =1.
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