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TN2219A

Fairchild Semiconductor
Part Number TN2219A
Manufacturer Fairchild Semiconductor
Description NPN General Purpose Amplifier
Published Mar 30, 2006
Detailed Description TN2219A TN2219A (TN2222A) C TO-226 B E NPN General Purpose Amplifier This device is for use as a medium power amplif...
Datasheet PDF File TN2219A PDF File

TN2219A
TN2219A

Overview
TN2219A TN2219A (TN2222A) C TO-226 B E NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA.
Sourced from Process 19.
See PN2222A for characteristics.
Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 75 6.
0 1.
0 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max TN2219A 1.
0 8.
0 125 50 Units W W/°C °C/W °C/W www.
DataSheet4U.
com  1997 Fairchild Semiconductor Corporation www.
DataSheet4U.
com www.
DataSheet4U.
com TN2219A NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IEBO IBL Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current IC = 10 mA, IB = 0 IC = 10 µ A, IE = 0 IE = 10 µ A, IC = 0 VCE = 60 V, VEB(OFF) = 3.
0 V VCB = 60 V, IE = 0 VCB = 60 V, IE = 0, TA = 150°C VEB = 3.
0 V, IC = 0 VCE = 60 V, VEB(OFF) = 3.
0 40 75 6.
0 10 10 10 10 20 V V V nA nA µA nA nA ON CHARACTERISTICS hFE DC Current Gain IC = 0.
1 mA, VCE = 10 V IC = 1.
0 mA, VCE = 10 V IC = 10 mA, ...


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