DatasheetsPDF.com

NTF3055L108

ON Semiconductor
Part Number NTF3055L108
Manufacturer ON Semiconductor
Description Power MOSFET
Published Apr 17, 2006
Detailed Description NTF3055L108, NVF3055L108 MOSFET – Power, N-Channel, Logic Level, SOT-223 3.0 A, 60 V Designed for low voltage, high sp...
Datasheet PDF File NTF3055L108 PDF File

NTF3055L108
NTF3055L108

Overview
NTF3055L108, NVF3055L108 MOSFET – Power, N-Channel, Logic Level, SOT-223 3.
0 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Features • NVF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuits MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Drain−to−Source Voltage VDSS 60 Drain−to−Gate Voltage (RGS = 1.
0 MW) VDGR 60 Gate−to−Source Voltage − Continuous − Non−repetitive (tp ≤ 10 ms) VGS ± 15 ± 20 Drain Current − Continuous @ TA = 25°C (Note 1) − Continuous @ TA = 100°C (Note 2) − Single Pulse (tp ≤ 10 ms) ID 3.
0 ID 1.
4 IDM 9.
0 Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) Derate above 25°C PD 2.
1 1.
3 0.
014 Unit Vdc Vdc Vdc Vpk Adc Apk Watts Watts W/°C Operating and Storage Temperature Range TJ, Tstg − 55 to 175 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.
0 Vdc, IL(pk) = 7.
0 Apk, L = 3.
0 mH, VDS = 60 Vdc) EAS 74 mJ Thermal Resistance −Junction−to−Ambient (Note 1) −Junction−to−Ambient (Note 2) RqJA RqJA °C/W 72.
3 114 Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
www.
onsemi.
com 3.
0 A, 60 V RDS(on) = 120 mW N−Channel D G S 4 SOT−223 12 CASE 318E STYLE 3 3 MARKING DIAGRAM 3055L = Device Code A = Assembly Location Y = Year AYW 3055LG G W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT 4 Drain 123 Gate Drain Sourc...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)