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AT41470

Advanced Semiconductor
Part Number AT41470
Manufacturer Advanced Semiconductor
Description NPN SILICON BIPOLAR TRANSISTOR
Published Apr 24, 2006
Detailed Description ( DataSheet : www.DataSheet4U.com ) AT41470 NPN SILICON BIPOLAR TRANSISTOR DESCRIPTION: The ASI AT41470 is a Common Em...
Datasheet PDF File AT41470 PDF File

AT41470
AT41470

Overview
( DataSheet : www.
DataSheet4U.
com ) AT41470 NPN SILICON BIPOLAR TRANSISTOR DESCRIPTION: The ASI AT41470 is a Common Emitter Device Designed for low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies.
PACKAGE STYLE MAXIMUM RATINGS IC VCEO VCBO VEBO PDISS TJ TSTG 60 mA 12 V 20 V 1.
5 V 500 mW @ TC = 25°C -65 °C to +200 °C -65 °C to +150 °C 1 = BASE 2 & 4 = EMITTER 3 = COLLECTOR CHARACTERISTICS SYMBOL ICBO IEBO hFE CCB ft S21E  P1dB G1dB 2 TC = 25 C O TEST CONDITIONS VCB = 8.
0 V VEB = 1.
0 V VCE = 8.
0 V VCB = 8.
0 V VCE = 8.
0 V VCE = 8.
0 V VCE = 8.
0 V VCE = 8.
0 V VCE = 8.
0 V IC = 25 mA IC = 25 mA IC = 25 mA IC = 25 mA IC = 10 mA IC = 10 mA f = 1.
0 MHz f = 1.
0 GHz f = 2.
0 GHz f = 4.
0 GHz f = 2.
0 GHz f = 4.
0 GHz f = 2.
0 GHz f = 4.
0 GHz f = 1.
0 GHz f = 2.
0 GHz f = 4.
0 GHz MINIMUM TYPICAL MAXIMUM 200 1.
0 30 150 0.
2 8.
0 12.
0 6.
5 19.
0 18.
5 15.
0 10.
5 1.
3 1.
6 3.
0 1.
9 300 UNITS Na µA --pF GHz dB dBm dB NFO dB A D V A N C E D S E M I ...


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