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K7M161825M

Samsung semiconductor
Part Number K7M161825M
Manufacturer Samsung semiconductor
Description (K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM
Published Apr 30, 2006
Detailed Description ( DataSheet : www.DataSheet4U.com ) K7M163625M K7M161825M Document Title 512Kx36 & 1Mx18 Flow-Through Nt RAM TM 512Kx...
Datasheet PDF File K7M161825M PDF File

K7M161825M
K7M161825M

Overview
( DataSheet : www.
DataSheet4U.
com ) K7M163625M K7M161825M Document Title 512Kx36 & 1Mx18 Flow-Through Nt RAM TM 512Kx36 & 1Mx18-Bit Flow Through Nt RAMTM Revision History Rev.
No.
0.
0 0.
1 0.
2 History 1.
Initial document.
1.
Update ICC & ISB values.
1.
Change tOE from 3.
5ns to 4.
0ns at -8 .
2.
Change tOE from 3.
5ns to 4.
0ns at -9 .
3.
Change tOE from 3.
5ns to 4.
0ns at -10 .
1.
Change ISB value from 60mA to 80mA at -8.
2.
Change ISB value from 50mA to 70mA at -9 .
3.
Change ISB value from 40mA to 60mA at -10 .
1.
Changed tCYC from 12ns to 10ns at -9 .
2.
Changed DC condition at Icc and parameters Icc ; from 300mA to 320mA at -8, from 260mA to 300mA at -9, from 240mA to 280mA at -10 3.
Chan...


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