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JS28F640P30B85

Intel Corporation
Part Number JS28F640P30B85
Manufacturer Intel Corporation
Description Intel StrataFlash Embedded Memory
Published May 9, 2006
Detailed Description ( DataSheet : www.DataSheet4U.com ) Intel StrataFlash® Embedded Memory (P30) 1-Gbit P30 Family Datasheet Product Feat...
Datasheet PDF File JS28F640P30B85 PDF File

JS28F640P30B85
JS28F640P30B85

Overview
( DataSheet : www.
DataSheet4U.
com ) Intel StrataFlash® Embedded Memory (P30) 1-Gbit P30 Family Datasheet Product Features ■ High performance ■ Security — 85/88 ns initial access — One-Time Programmable Registers: • 64 unique factory device identifier bits — 40 MHz with zero wait states, 20 ns clock-to• 64 user-programmable OTP bits data output synchronous-burst read mode • Additional 2048 user-programmable OTP bits — 25 ns asynchronous-page read mode — Selectable OTP Space in Main Array: — 4-, 8-, 16-, and continuous-word burst mode • 4x32KB parameter blocks + 3x128KB main — Buffered Enhanced Factory Programming blocks (top or bottom configuration) (BEFP) at 5 µs/byte (Typ) — Absolute write protection: VPP = VSS — 1.
8 V buffered programming at 7 µs/byte (Typ) — Power-transition erase/program lockout ■ Architecture — Individual zero-latency block locking — Multi-Level Cell Technology: Highest Density — Individual block lock-down at Lowest Cost ■ Software — Asymmetrically-blocked architecture — 20 µs (Typ) program suspend — Four 32-KByte parameter blocks: top or — 20 µs (Typ) erase suspend bottom configuration — Intel® Flash Data Integrator optimized — 128-KByte main blocks — Basic Command Set and Extended Command ■ Voltage and Power Set compatible — VCC (core) voltage: 1.
7 V – 2.
0 V — Common Flash Interface capable — VCCQ (I/O) voltage: 1.
7 V – 3.
6 V ■ Density and Packaging — Standby current: 55 µA (Typ) for 256-Mbit — 64/128/256-Mbit densities in 56-Lead TSOP — 4-Word synchronous read current: package 13 mA (Typ) at 40 MHz — 64/128/256/512-Mbit densities in 64-Ball ■ Quality and Reliability Intel® Easy BGA package — Operating temperature: –40 °C to +85 °C • 1-Gbit in SCSP is –30 °C to +85 °C — 64/128/256/512-Mbit and 1-Gbit densities in Intel® QUAD+ SCSP — Minimum 100,000 erase cycles per block — 16-bit wide data bus — ETOX™ VIII process technology (130 nm) The Intel StrataFlash® Embedded Memory (P30) product is the latest generation of Intel StrataFlash® memory...


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