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HN29V2G74WT-30

Part Number	HN29V2G74WT-30
Manufacturer	Renesas Technology
Description	AG-AND Flash Memory
Published	May 26, 2006
Detailed Description	HN29V2G74WT-30 (128M × 8-bit) ×2 AG-AND Flash Memory REJ03C0182-0200Z Rev. 2.00 Jul.21.2004 Description The HN29V2G74 i...
Datasheet	HN29V2G74WT-30 PDF File

Overview

HN29V2G74WT-30 (128M × 8-bit) ×2 AG-AND Flash Memory REJ03C0182-0200Z Rev.
2.
00 Jul.
21.
2004 Description The HN29V2G74 is a 2G-bit AG-AND flash memory.
It mounts two 1G-bit AG-AND flash memories with multi-level memory cells, which are programmable and erasable automatically with a single 3.
0 V power supply.
It achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous multi level cell Flash memory, using 0.
13µm process technology and AG-AND (Assist Gate-AND) type Flash memory cell using multi level cell technology provides both the most cost effective solution and high speed programming.
Features • On-board single power supply: VCC = 2.
7 V to 3.
6 V • Operation...

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HN29V2G74WT-30 AG-AND Flash Memory - Renesas Technology

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