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KSC3488

Fairchild Semiconductor
Part Number KSC3488
Manufacturer Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Published May 27, 2006
Detailed Description www.DataSheet4U.com KSC3488 KSC3488 Low Frequency Power Amplifier • Complement to KSA1378 • Collector Dissipation : PC...
Datasheet PDF File KSC3488 PDF File

KSC3488
KSC3488


Overview
www.
DataSheet4U.
com KSC3488 KSC3488 Low Frequency Power Amplifier • Complement to KSA1378 • Collector Dissipation : PC=300mW 1 TO-92S 1.
Emitter 2.
Collector 3.
Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 30 25 5 300 300 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Test Condition IC=100µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=25V, IE=0 VEB=3V, IC=0 VCE=1V, IC=50mA IC=300mA, IB=30mA 70 0.
14 Min.
30 25 5 0.
1 0.
1 400 0.
4 V Typ.
Max.
Units V V V µA µA hFE Classification Classification hFE O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 www.
DataSheet4U.
com ©2002 Fairchild Semiconductor Corporation Rev.
A2, September 2002 www.
DataSheet4U.
com KSC3488 Typical Characteristics 50 45 IB = 450µA IB = 400µA 1000 VCE=1V IC[mA], COLLECTOR CURRENT 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 IB = 300µA IB = 250µA IB = 200µA IB = 150µA IB = 100µA IB = 50µA hFE, DC CURRENT GAIN IB = 350µA 100 10 1 6 7 8 9 10 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1.
Static Characteristic Figure 2.
DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 100 IC=10IB VCE=1 IC[mA], COLLECTOR CURRENT 80 1 VBE(sat) 60 40 0.
1 V CE(sat) 20 0.
01 0.
1 1 10 100 0 0.
0 0.
2 0.
4 0.
6 0.
8 1.
0 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3.
Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4.
Base-Emitter On Voltage 20 fT[MHz], CURREN...


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