DatasheetsPDF.com

STW45NM50FD

ST Microelectronics
Part Number STW45NM50FD
Manufacturer ST Microelectronics
Description N-CHANNEL MOSFET
Published May 29, 2006
Detailed Description STW45NM50FD N-channel 500 V, 0.07 Ω, 45 A, TO-247 FDmesh™ Power MOSFET (with fast diode) Features Type STW45NM50FD VD...
Datasheet PDF File STW45NM50FD PDF File

STW45NM50FD
STW45NM50FD


Overview
STW45NM50FD N-channel 500 V, 0.
07 Ω, 45 A, TO-247 FDmesh™ Power MOSFET (with fast diode) Features Type STW45NM50FD VDSS 500 V RDS(on) max < 0.
1 Ω ID 45 A ■ 100% avalanche tested ■ High dv/dt and avalanche capabilities ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode.
It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
3 2 1 TO-247 Figure 1.
Internal schematic diagram $ ' Table 1.
Device summary Order code Marking STW45NM50FD W45NM50FD 3 !-V Package TO-247 Packaging Tube July 2009 Doc ID 7955 Rev 10 1/12 www.
st.
com 12 Contents Contents STW45NM50FD 1 Electrical ratings .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
3 2 Electrical characteristics .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
4 2.
1 Electrical characteristics (curves) .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
6 3 Test circuits .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
8 4 Package mechanical data .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
9 5 Revision history .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
11 2/12 Doc ID 7955 Rev 10 STW45NM50FD 1 Electrical ratings Table 2.
Symbol Absolute maximum ratings Parameter VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC=100 °C IDM(1) Drain current (pulsed) PTOT Total dissipation at TC = 25 °C Derating factor dv/dt(2) Peak diode recovery voltage slope TJ Operating junction temperature Tstg Storage temperature 1.
Pulse width limited by safe operating area 2.
ISD ≤ 45 A, di/dt ≤ 400 A/µs, VDD ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)