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T1030W

ST Microelectronics
Part Number T1030W
Manufacturer ST Microelectronics
Description (T1020W / T1030W) SNUBBERLESS TRIAC
Published Jun 2, 2006
Detailed Description www.DataSheet4U.com ® T1020W T1030W SNUBBERLESS TRIAC FEATURES ITRMS = 10 A VDRM = VRRM = 400V to 800V EXCELLENT SWIT...
Datasheet PDF File T1030W PDF File

T1030W
T1030W

Overview
www.
DataSheet4U.
com ® T1020W T1030W SNUBBERLESS TRIAC FEATURES ITRMS = 10 A VDRM = VRRM = 400V to 800V EXCELLENT SWITCHING PERFORMANCES INSULATING VOLTAGE = 1500V(RMS) U.
L.
RECOGNIZED : E81734 DESCRIPTION The T1020/1030W triacs use high performance glass passivated chip technology, housed in a fully molded plastic ISOWATT220AB package.
The SNUBBERLESSTM concept offers suppression of R-C network, and is suitable for applications such as phase control and static switch on inductive and resistive loads.
ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C ) Parameter Tc= 90°C tp = 16.
7 ms (1 cycle, 60 Hz) tp = 10 ms (1/2 cycle, 50 Hz) I2 t dI/dt I2t Value (half-cycle, 50 Hz) Critical rate of rise of on-state current Gate supply : IG = 500 mA dIG /dt = 1 A/µs.
tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage temperature range Operating junction temperature range Maximum lead temperature for soldering during 10s at 4.
5 mm from case Parameter 400 VDRM VRRM Repetitive peak off-state voltage Tj = 125°C 400 T1020 / 1030-xxxW 600 600 700 700 800 800 V Value 10 110 125 78 20 100 - 40 to + 150 - 40 to + 125 260 °C °C A2s A/µs Unit A A A1 A2 G A2 A1 G ISOWATT220AB (Plastic) Symbol Unit www.
DataSheet4U.
com November 1996 1/5 www.
DataSheet4U.
com T1020W / 1030W THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Junction to ambient Junction to case for A.
C (360 ° conduction angle) Parameter Value 50 3.
0 Unit °C/W °C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IH * VTM * IDRM IRRM dV/dt * (dV/dt)c * Test Conditions VD=12V (DC) RL=33Ω VD=12V (DC) RL=33Ω VD=VDRM RL=3.
3kΩ VD=VDRM IG = 500mA dlG/dt= 3Aµs IT= 100mA Gate open Tj= 25°C Tj= 25°C Tj= 125°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 125°C Tj= 125°C Quadrant I-II-III I-II-III I-II-III I-II-III MAX MAX MIN TYP MAX MAX MA...


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