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MRF240

Motorola
Part Number MRF240
Manufacturer Motorola
Description RF POWER TRANSISTORS
Published Jun 15, 2006
Detailed Description www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF240/D The RF Line NPN Silicon R...
Datasheet PDF File MRF240 PDF File

MRF240
MRF240

Overview
www.
DataSheet4U.
com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF240/D The RF Line NPN Silicon RF Power Transistors .
.
.
designed for 13.
6 volt VHF large–signal class C and class AB linear power amplifier applications in commercial and industrial equipment.
• High Common Emitter Power Gain • Specified 13.
6 V, 160 MHz Performance: Output Power = 40 Watts Power Gain = 9.
0 dB Min Efficiency = 55% Min • Load Mismatch Capability at Rated Voltage and RF Drive • Silicon Nitride Passivated • Low Intermodulation Distortion, d3 = – 30 dB Typ MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 16 36 4.
0 8.
0 100 0.
57 – 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C MRF240 40 W, 145 – 175 MHz RF POWER TRANSISTORS NPN SILICON CASE 145A–09, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Symbol RθJC Max 1.
75 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.
) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 5.
0 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) DC Current Gain (IC = 4.
0 Adc, VCE = 5.
0 Vdc) Output Capacitance (VCB = 12.
5 Vdc, IE = 0, f = 1.
0 MHz) m V(BR)CEO V(BR)CES V(BR)EBO ICBO 16 36 4.
0 — — — — — — — — 10 Vdc Vdc Vdc mAdc taS hee t4U .
co ON CHARACTERISTICS hFE 10 70 150 — DYNAMIC CHARACTERISTICS Cob — 90 125 pF ww w.
D a NOTES: (continued) 1.
This device is designed for RF operation.
The total device dissipation rating applies only when the device is operated as an RF amplifier.
2.
Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
RF DEV...


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