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STD30PF03L

ST Microelectronics
Part Number STD30PF03L
Manufacturer ST Microelectronics
Description P-CHANNEL POWER MOSFET
Published Jun 17, 2006
Detailed Description www.DataSheet4U.com P-CHANNEL 30V - 0.025Ω - 24A DPAK/IPAK STripFET™ II POWER MOSFET PRELIMINARY DATA TYPE STD30PF03L S...
Datasheet PDF File STD30PF03L PDF File

STD30PF03L
STD30PF03L

Overview
www.
DataSheet4U.
com P-CHANNEL 30V - 0.
025Ω - 24A DPAK/IPAK STripFET™ II POWER MOSFET PRELIMINARY DATA TYPE STD30PF03L STD30PF03L-1 s s STD30PF03L STD30PF03L-1 VDSS 30 V 30 V RDS(on) < 0.
028Ω < 0.
028Ω ID 24 A 24 A s s s TYPICAL RDS(on) = 0.
025Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE LOW GATE CHARGE EXTREMELY LOW FIGURE OF MERIT (RDS(on) * Qg) 3 1 2 1 3 DPAK IPAK DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process.
The resulting transistor shows extremely high packing density for low on-resistance and low gate charge.
INTERNAL SCHEMATIC DIAGRAM s APPLICATIONS DC-DC CONVERTERS Symbol VDS VDGR VGS ID (#) ID (#) PTOT Tstg Tj m ABSOLUTE MAXIMUM RATINGS Parameter Value 30 30 ± 16 24 24 96 70 0.
47 – 55 to 175 175 Unit V V V A A A W W/°C °C °C 4U eet IDM (l) Sh ata .
co Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max.
Operating Junction Temperature (q) Pulse width limited by safe operating area (#) Current limited by wire bonding Note:For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed ww w.
D May 2002 1/8 www.
DataSheet4U.
com STD30PF03L - STD30PF03L-1 THERMAL DATA Rthj-case Rthj-amb Tj Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Operating Junction Temperature 2.
14 100 275 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 25 V) Max Value 24 350 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage...


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