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IRFP264N

International Rectifier
Part Number IRFP264N
Manufacturer International Rectifier
Description Power MOSFET
Published Jun 20, 2006
Detailed Description l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Ra...
Datasheet PDF File IRFP264N PDF File

IRFP264N
IRFP264N

Overview
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements PD - 94214A IRFP264N HEXFET® Power MOSFET D VDSS = 250V RDS(on) = 60mΩ G ID = 44A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.
The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
TO-247AC Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EA...


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