DatasheetsPDF.com

IRFP260

Vishay Siliconix
Part Number IRFP260
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Oct 21, 2009
Detailed Description Power MOSFET IRFP260, SiHFP260 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) ...
Datasheet PDF File IRFP260 PDF File

IRFP260
IRFP260

Overview
Power MOSFET IRFP260, SiHFP260 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 230 42 110 Single 0.
055 TO-247AC D S D G G S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices.
The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mouting hole.
It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247AC IRFP260PbF SiHFP260-E3 IRFP260 SiHFP260 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
VDD = 50 V, starting TJ = 25 °C, L = 708 μH, Rg = 25 Ω, IAS = 46 A (see fig.
12).
c.
ISD ≤ 46 A, dI/dt ≤ 230 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d.
1.
6 mm from case.
LIMIT 200 ± 20 46 29 180 2.
2 1000 46 28 280 5.
0 - 55 to + 150 300d 10 1.
1 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)