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SUB85N03-04P

Vishay Siliconix
Part Number SUB85N03-04P
Manufacturer Vishay Siliconix
Description N-Channel MOSFET
Published Jun 22, 2006
Detailed Description www.DataSheet4U.com SUP/SUB85N03-04P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY V...
Datasheet PDF File SUB85N03-04P PDF File

SUB85N03-04P
SUB85N03-04P

Overview
www.
DataSheet4U.
com SUP/SUB85N03-04P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.
0043 @ VGS = 10 V 0.
007 @ VGS = 4.
5 V ID (A)a 85a 85a TO-220AB D TO-263 G DRAIN connected to TAB G G D S Top View SUP85N03-04P D S S N-Channel MOSFET Top View SUB85N03-04P www.
DataSheet4U.
com ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb L = 0.
1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 30 "20 85a 85a 240 75 280 166c 3.
75 –55 to 175 Unit V A mJ W _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mount Junction-to-Ambient Junction-to-Case Notes a.
Package limited.
b.
Duty cycle v 1%.
c.
See SOA curve for voltage derating.
d.
When mounted on 1” square PCB (FR-4 material).
Document Number: 71241 S-20120—Rev.
B, 12-Mar-02 www.
vishay.
com (TO-263)d RthJA RthJC Symbol Limit 40 62.
5 0.
9 Unit Free Air (TO-220AB) _C/W 1 www.
DataSheet4U DataSheet4U.
com www.
DataSheet4U.
com SUP/SUB85N03-04P Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 125_C VDS = 24 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A VGS = 10 V, ID = 30 A, TJ = 125_C Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 175_C VGS = 4.
5 V, ID = 20 A Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 0.
0055 120 0.
0035 0.
0043 0.
0065 0.
008 0.
007 S W 30 V 1 2 "100 1 50...


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