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SUB70N03-09P

Vishay Siliconix
Part Number SUB70N03-09P
Manufacturer Vishay Siliconix
Description N-Channel MOSFET
Published Jun 22, 2006
Detailed Description www.DataSheet4U.com SPICE Device Model SUP/SUB70N03-09P Vishay Siliconix N-Channel 30-V (D-S), 175°C MOSFET PWM Optimi...
Datasheet PDF File SUB70N03-09P PDF File

SUB70N03-09P
SUB70N03-09P

Overview
www.
DataSheet4U.
com SPICE Device Model SUP/SUB70N03-09P Vishay Siliconix N-Channel 30-V (D-S), 175°C MOSFET PWM Optimized CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit Schematic) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS.
The subcircuit model schematic is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-to-5V gate drive.
The saturated output impedance is best fit at the gate bias near the threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model.
All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC www.
DataSheet4U.
com This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet.
Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.
Document Number: 71566 05-Nov-98 www.
vishay.
com 1 www.
DataSheet4U DataSheet4U.
com www.
DataSheet4U.
com SPICE Device Model SUP/ SUB70N03-09P Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage On-State Drain Current a Symbol VGS(th) ID(on) Test Conditions VDS = VGS, ID = 250 µA VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Typical 1.
67 621 0.
007 0.
011 0.
0108 0.
0127 51 0.
92 Unit V A Drain-Source On-State Resistance a rDS(on) VGS = 4.
5 V, ID = 20 A VGS = 10 V, ID = 30 A, 125°C VGS = 10 V, ID = 30 A, 175°C Ω Forward Transconductance Diode Forward Voltage a a gfs VSD VDS = 15 V...


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