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DDB6U84N12RR

Eupec GmbH
Part Number DDB6U84N12RR
Manufacturer Eupec GmbH
Description (DDB6U84N12RR - DDB6U84N16RR) Technische Information
Published Jun 28, 2006
Detailed Description www.DataSheet4U.com Technische Information / Technical Information Dioden-Modul mit Chopper-IGBT Diode Module with Chop...
Datasheet PDF File DDB6U84N12RR PDF File

DDB6U84N12RR
DDB6U84N12RR

Overview
www.
DataSheet4U.
com Technische Information / Technical Information Dioden-Modul mit Chopper-IGBT Diode Module with Chopper-IGBT DD B6U 84 N 12.
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16 RR Vorläufige Daten Preliminary data Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Netz-Diode / Rectifier diode Periodische Spitzensperrspannung repetitive peak reverse voltage Durchlaßstrom-Grenzeffektivwert (pro Element) RMS forward current (per chip) Ausgangsstrom output current Stoßstrom-Grenzwert surge forward current Grenzlastintegral I²t-value IGBT Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor-Spitzenstrom repetitive peak collektor current Gesamt-Verlustleistung total power dissipation tp = 1ms TC = 100°C TC = 84°C Tvj = 25°C, tS = 10ms Tvj = Tvj max, tp = 10ms Tvj = 25°C, tS = 10ms Tvj = Tvj max, tp = 10ms Tvj = - 40°C.
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Tvj max VRRM 1200, 1400 1600 60 V IFRMSM A Id 85 104 650 550 2100 1500 A A A A A²s A²s IFSM I²t VCES 1200 V IC 50 A ICRM 100 A TC = 25°C Ptot 350 W Gate-Emitter Spitzenspannung gate-emitter peak voltage Schnelle Diode / Fast diode Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forward current Modul Isolations-Prüfspannung insulation test voltage www.
DataSheet4U.
com VGE IF tp = 1ms ± 20 V 25 A IFRM 50 A RMS, f = 50Hz, t = 1min VISOL 2,5 kV Charakteristische Werte / Characteristic values Netz-Diode / Rectifier diode Durchlaßspannung forward voltage Schleusenspannung threshold voltage Ersatzwiderstand forward slope resistance Sperrstrom reverse current IGBT Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Emitter-Schwellspannung gate-emitter threshold voltage Tvj = 25°C, iC = 50A, vGE = 20V Tvj = 125°C, iC = 50A, vGE = 20V Tvj = 25°C, iC = 2mA, vGE = vCE Tvj = Tvj max, iF = 100A min.
typ.
max.
vF 1,55 V Tvj = Tvj max V(TO) 0,75 V mΩ Tvj = Tvj max rT 5,5 Tvj = Tv...


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