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M5M29GT320VP-80

Part Number	M5M29GT320VP-80
Manufacturer	Renesas
Description	CMOS Block Erase Flash Memory
Published	Jun 28, 2006
Detailed Description	com Renesas LSIs 33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLO...
Datasheet	M5M29GT320VP-80 PDF File

Overview

com Renesas LSIs 33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.
3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The Mobile FLASH M5M29GB/T320VP are 3.
3V-only high speed 33,554,432-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature.
The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simultaneously allows Read operations to be performed on the other bank.
This BGO feature is suitable for mobile and personal computing, and communication products.
The M5M29GB/T320VP are fabricated by CMOS technology for the peripheral circuits and DINOR(Divided bit line NOR) a...

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M5M29GT320VP-80 CMOS Block Erase Flash Memory - Renesas

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