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EN29LV400

Eon Silicon Solution
Part Number EN29LV400
Manufacturer Eon Silicon Solution
Description 4M Flash Memory
Published Jun 29, 2006
Detailed Description www.DataSheet4U.com EN29LV400 EN29LV400 4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory Boot Sector Flash Memory...
Datasheet PDF File EN29LV400 PDF File

EN29LV400
EN29LV400

Overview
www.
DataSheet4U.
com EN29LV400 EN29LV400 4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
0 Volt-only FEATURES • 3V, single power supply operation - Full voltage range: 2.
7-3.
6 volt read and write operations for battery-powered applications.
- Regulated voltage range: 3.
0-3.
6 volt read and write operations and for compatibility with high performance 3.
3 volt microprocessors.
• High performance - Access times as fast as 45 ns • Low power consumption (typical values at 5 MHz) - 7 mA typical active read current - 15 mA typical program/erase current - 1 µA typical standby current (standard access time to active mode) • Flexible Sector Architecture: - One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbyte sectors (byte mode) - One 8 Kword, two 4 Kword, one 16 Kword and seven 32 Kword sectors (word mode) - Supports full chip erase - Individual sector erase supported - Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors Additionally, temporary Sector Group Unprotect allows code changes in previously locked sectors.
• High performance program/erase speed - Byte/Word program time: 8µs typical - Sector erase time: 500ms typical • JEDEC Standard program and erase commands • JEDEC standard DATA polling and toggle bits feature • Single Sector and Chip Erase • Sector Unprotect Mode • Embedded Erase and Program Algorithms • Erase Suspend / Resume modes: Read or program another Sector during Erase Suspend Mode • triple-metal double-poly triple-well CMOS Flash Technology • Low Vcc write inhibit < 2.
5V • Package Options - 48-pin TSOP (Type 1) - 48-ball 6mm x 8mm FBGA • Commercial and Industrial Temperature Range • >100K program/erase endurance cycle da0.
www.
DataSheet4U.
com GENERAL DESCRIPTION The EN29LV400 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 524,288 bytes or 256,144 words.
Any byte can be programmed typically in 8µs.
The EN2...


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