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TC74HCT373AF

Toshiba Semiconductor
Part Number TC74HCT373AF
Manufacturer Toshiba Semiconductor
Description Octal D-Type Latch
Published Jul 2, 2006
Detailed Description TC74HCT373AP/AF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HCT373AP, TC74HCT373AF Octal D-Type Latch...
Datasheet PDF File TC74HCT373AF PDF File

TC74HCT373AF
TC74HCT373AF

Overview
TC74HCT373AP/AF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HCT373AP, TC74HCT373AF Octal D-Type Latch with 3-State Output The TC74HCT373A is a high speed CMOS OCTAL LATCH with 3-STATE OUTPUT fabricated with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.
Their inputs are compatible with TTL, NMOS, and CMOS output voltage levels.
These 8-bit D-type latches are controlled by a latch enable input (LE) and an output enable input ( OE ).
When the OE input is high, the eight outputs are in a high impedance state.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
Features • High speed: tpd = 17 ns (typ.
) at VCC = 5 V • Low power dissipation: ICC = 4 μA (max) at Ta = 25°C • Compatible with TTL outputs: VIH = 2 V (min) VIL = 0.
8 V (max) • Wide interfacing ability: LSTTL, NMOS, CMOS • Output drive capability: 15 LSTTL loads • Symmetrical output impedance: |IOH| = IOL = 6 mA (min) • Balanced propagation delays: tpLH ∼− tpHL • Pin and function compatible with 74LS373 Pin Assignment TC74HCT373AP TC74HCT373AF Weight DIP20-P-300-2.
54A SOP20-P-300-1.
27A : 1.
30 g (typ.
) : 0.
22 g (typ.
) Start of commercial production 1988-11 1 2014-03-01 IEC Logic Symbol TC74HCT373AP/AF Truth Table Inputs OE LE D H X X L L X L H L L H H Output Q Z Qn L H X: Don’t care Z: High impedance Qn: Q outputs are latched at the time when the LE input is taken to a low logic level.
System Diagram 2 2014-03-01 TC74HCT373AP/AF Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature VCC VIN VOUT IIK IOK IOUT ICC PD Tstg −0.
5 to 7 V −0.
5 to VCC + 0.
5 V −0.
5 to VCC + 0.
5 V ±20 mA ±20 mA ±35 mA ±75 mA 500 (DIP) (...


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