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IXFT15N100Q

IXYS Corporation
Part Number IXFT15N100Q
Manufacturer IXYS Corporation
Description HiPerFET Power MOSFETs
Published Jul 8, 2006
Detailed Description HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFH 15N100Q IXFK 15N10...
Datasheet PDF File IXFT15N100Q PDF File

IXFT15N100Q
IXFT15N100Q

Overview
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q VDSS = 1000 V ID25 = 15 A RDS(on) = 0.
7 Ω trr ≤ 250 ns Preliminary data sheet TO-247 AD (IXFH) Symbol VDSS V DGR VGS VGSM ID25 IDM I AR EAR E AS dv/dt PD TJ TJM Tstg TL M d Weight Symbol VDSS VGS(th) I GSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C T C = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, T J ≤ 150°C, R G = 2 Ω TC = 25°C 1.
6 mm (0.
063 in) from case for 10 s Maximum Ratings 1000 V 1000 V ±20 V ±30 V 15 A 60 A 15 A 45 mJ 1.
5 J 5 V/ns 360 W -55 .
.
.
+150 °C 150 °C -55 .
.
.
+150 °C 300 °C Mounting torque TO-247 TO-264 TO-247 TO-268 TO-264 1.
13/10 Nm/lb.
in.
0.
9/6 Nm/lb.
in.
6 g 4 g 10 g Test Conditions Characteristic Values (TJ = 25°C, unless ot...


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