DatasheetsPDF.com

T830W

ST Microelectronics
Part Number T830W
Manufacturer ST Microelectronics
Description 8A SNUBBERLESS TRIAC
Published Jul 19, 2006
Detailed Description www.DataSheet4U.com T820W ® T830W SNUBBERLESS TRIAC FEATURES ITRMS = 8 A VDRM = VRRM = 400V to 700V EXCELLENT SWITCHIN...
Datasheet PDF File T830W PDF File

T830W
T830W


Overview
www.
DataSheet4U.
com T820W ® T830W SNUBBERLESS TRIAC FEATURES ITRMS = 8 A VDRM = VRRM = 400V to 700V EXCELLENT SWITCHING PERFORMANCES INSULATING VOLTAGE = 1500V(RMS) U.
L.
RECOGNIZED : E81734 A2 DESCRIPTION The T820/830W triacs use high performance glass passivated chip technology, housed in a fully molded plastic ISOWATT220AB package.
The SNUBBERLESSTM concept offers suppression of R-C network, and is suitable for applications such as phase control and static switch on inductive and resistive loads.
DataSheet4U.
com A1 G A1 A2 G ISOWATT220AB (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM I2t dI/dt Tstg Tj Tl Parameter Value Unit RMS on-state current (360° conduction angle) Tc= 95°C 8A Non repetitive surge peak on-state current (Tj initial = 25°C ) tp = 16.
7 ms (1 cycle, 60 Hz) 88 A I2t Value (half-cycle, 50 Hz) tp = 10 ms (1/2 cycle, 50 Hz) tp = 10 ms 100 50 A2s Critical rate of rise of on-state current Gate supply : IG = 500 mA dIG /dt = 1 A/µs.
Repetitive F = 50 Hz 20 A/µs Non Repetitive 100 Storage temperature range Operating junction temperature range - 40 to + 150 °C - 40 to + 125 Maximum lead temperature for soldering during 10s at 4.
5 mm from case 260 °C Symbol Parameter VDRM DataSheet4U.
comVRRM April 1995 DataSheet4 U .
com Repetitive peak off-state voltage Tj = 125°C T820 / 830-xxxW 400 600 700 400 600 700 Unit V DataSheet4U.
com 1/5 DataShee www.
DataSheet4U.
com et4U.
com T820W / 830W THERMAL RESISTANCES Symbol Parameter Rth(j-a) Rth(j-c) Junction to ambient Junction to case for A.
C (360° conduction angle) Value 50 3.
1 Unit °C/W °C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant T820 T830 Unit IGT VD=12V (DC) RL=33Ω Tj= 25°C I-II-III MAX 20 30 mA VGT VD=12V (DC) RL=33Ω Tj= 25°C I-II-III MAX 1.
5 V VGD VD=VDRM RL=3.
3kΩ Tj= 125°C I-II-III MIN 0.
2 V tgt VD=VDRM IG = 500mA dlG...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)