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NE663M04

California Eastern Labs
Part Number NE663M04
Manufacturer California Eastern Labs
Description NPN SILICON HIGH FREQUENCY TRANSISTOR
Published Jul 24, 2006
Detailed Description www.DataSheet4U.com NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • • HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH PO...
Datasheet PDF File NE663M04 PDF File

NE663M04
NE663M04

Overview
www.
DataSheet4U.
com NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • • HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz LOW NOISE FIGURE: NF = 1.
2 dB at 2 GHz HIGH IP3: NF = 27 dBm at 2 GHz HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of just 0.
59 mm.
Flat Lead Style for better RF performance.
M04 NE663M04 DESCRIPTION NEC's NE663M04 is fabricated using NEC's UHS0 25 GHz fT wafer process.
With a typical transition frequency of 19 GHz the NE663M04 is usable in applications from 100 MHz to 5 GHz.
The NE663M04 provides excellent low voltage/low current performance.
NEC's low profile/flat lead style "M04...


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