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STK0240D

AUK
Part Number STK0240D
Manufacturer AUK
Description Advanced Power MOSFET
Published Jul 27, 2006
Detailed Description www.DataSheet4U.com Semiconductor STK0240D Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • Hi...
Datasheet PDF File STK0240D PDF File

STK0240D
STK0240D

Overview
www.
DataSheet4U.
com Semiconductor STK0240D Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage : BVDSS=400V(Min.
) Low Crss : Crss=4.
9pF(Typ.
) Low gate charge : Qg=4.
6nC(Typ.
) Low RDS(on) : RDS(on)=4.
1Ω(Max.
) Type NO.
STK0240D Marking STK0240 Package Code D-PAK Ordering Information Outline Dimensions unit : mm 6.
50~6.
70 5.
10~5.
50 DataSheet4U.
com 1.
18 Max.
2.
10~2.
50 DataShee 7.
77~7.
97 1.
15 Max.
0.
83 Max.
2.
30 Typ.
2.
30 Typ.
0.
55 Max.
1 2 3 PIN Connections 1.
Gate 2.
Drain 3.
Source DataSheet4U.
com KSD-T6O002-000 DataSheet4U.
com DataSheet 4 U .
com 1 www.
DataSheet4U.
com STK0240D Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) * (Tc=25°C) Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDP PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 400 ±30 2.
0 1.
7 8.
0 28 2.
0 59 2.
0 5.
5 150 -55~150 Unit V V A A A W A mJ A mJ °C Drain Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Junction-case Junction-ambient Symbol Rth(J-C) DataSheet4U.
com Rth(J-a) Typ.
- Max 4.
46 62.
5 Unit ℃/W Thermal et4U.
com resistance DataShee DataSheet4U.
com KSD-T6O002-000 DataSheet4U.
com DataSheet 4 U .
com 2 www.
DataSheet4U.
com STK0240D Electrical Characteristics Characteristic Drain-source breakdown voltage Gate-threshold voltage Drain-source leakage current Gate-source leakage Drain-Source on-resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④ (Tc=25°C) Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250µA, VGS=0 ID=250µA, VDS= VGS VDS=500V, VGS=0V VDS=0V, VG...


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