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IRG4PH30KD

International Rectifier
Part Number IRG4PH30KD
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Aug 8, 2006
Detailed Description www.DataSheet4U.com PD- 91579A IRG4PH30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Feature...
Datasheet PDF File IRG4PH30KD PDF File

IRG4PH30KD
IRG4PH30KD

Overview
www.
DataSheet4U.
com PD- 91579A IRG4PH30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes C Short Circuit Rated UltraFast IGBT VCES = 1200V G E VCE(on) typ.
= 3.
10V @VGE = 15V, IC = 10A n-ch an nel Benefits • Latest generation 4 IGBT's offer highest power density motor controls possible • HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and switching losses • This part replaces IRGPH30MD2 products • For hints see design tip 97003 DataShee TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG DataSheet4U.
com Max.
1200 20 10 40 40 10 40 10 ± 20 100 42 -55 to +150 300 (0.
063 in.
(1.
6mm) from case) 10 lbf•in (1.
1 N•m) Units V Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
A µs V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min.
––– ––– ––– ––– ––– Typ.
––– ––– 0.
24 ––– 6 (0.
21) Max.
1.
2 2.
5 ––– 40 ––– Units °C/W g (oz) www.
irf.
com DataSheet4U.
com 1 2/7/2000 DataSheet4U.
com DataSheet 4 U .
com www.
DataSheet4U.
com IR...


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