MTP30P06V Datasheet PDF

Part Number MTP30P06V
Manufacturer ON Semiconductor
Title Power MOSFET 30 Amps
Description MTP30P06V Preferred Device Power MOSFET 30 Amps, 60 Volts P–Channel TO–220 This Power MOSFET is designed to withstand high e...
Features o
  –Source Avalanche Energy
  – Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 30 Apk, L = 1.0 mH, RG = 25 Ω) Thermal Resistance
  – Junction to Case Thermal Resistance
  – Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 seconds Symbol VDSS VDGR VGS VGSM...

File Size 277.20KB
Datasheet MTP30P06V PDF File

Similar Ai Datasheet

MTP30P06V : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP30P06V/D Designer's TMOS V Power Field Effect Transistor P–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circui.

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)