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D4564163

NEC
Part Number D4564163
Manufacturer NEC
Description UPD4564163
Published Aug 21, 2006
Detailed Description DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441, 4564841, 4564163 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µP...
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D4564163
D4564163

Overview
DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441, 4564841, 4564163 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 × 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 (word × bit × bank), respectively.
The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.
All inputs and outputs are synchronized with the positive edge of the clock.
The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL).
These products are packaged in 54-pin TSOP (II).
Features • Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge • Pulsed interface • Possible to assert random column address in every cycle • Quad internal banks controlled by A12 and A13 (Bank Select) • Byte control (×16) by LDQM and UDQM • Programmable Wrap sequence (Sequential / Interleave) • Programmable burst length (1, 2, 4, 8 and full page) • Programma...


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