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H2N5401

Hi-Sincerity Mocroelectronics
Part Number H2N5401
Manufacturer Hi-Sincerity Mocroelectronics
Description PNP EPITAXIAL PLANAR TRANSISTOR
Published Mar 22, 2005
Detailed Description HI-SINCERITY MICROELECTRONICS CORP. H2N5401 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6203 Issued Date : 1992.09.22...
Datasheet PDF File H2N5401 PDF File

H2N5401
H2N5401

Overview
HI-SINCERITY MICROELECTRONICS CORP.
H2N5401 PNP EPITAXIAL PLANAR TRANSISTOR Spec.
No.
: HE6203 Issued Date : 1992.
09.
22 Revised Date : 2005.
01.
20 Page No.
: 1/5 Description The H2N5401 is designed for general purpose applications requiring high breakdown voltages.
Features • Complements to NPN Type H2N5551 • High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA)) TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature .
.
.
-55 ~ +150 °C Junction Temperature +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) .
625 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Bas...


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