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H2N6426

Hi-Sincerity Mocroelectronics
Part Number H2N6426
Manufacturer Hi-Sincerity Mocroelectronics
Description NPN EPITAXIAL PLANAR TRANSISTOR
Published Mar 22, 2005
Detailed Description HI-SINCERITY MICROELECTRONICS CORP. H2N6426 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6232 Issued Date : 1998.01.09...
Datasheet PDF File H2N6426 PDF File

H2N6426
H2N6426

Overview
HI-SINCERITY MICROELECTRONICS CORP.
H2N6426 NPN EPITAXIAL PLANAR TRANSISTOR Spec.
No.
: HE6232 Issued Date : 1998.
01.
09 Revised Date : 2005.
01.
20 Page No.
: 1/4 Description Darlington Transistor Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature .
.
.
-55 ~ +150 °C Junction Temperature +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) .
625 mW • Maximum Voltages and Currents (TA=25°C) BVCEO Collector to Emitter Voltage.
.
.
40 V BVCBO Collector to Base Voltage.
.
.
...


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