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IDC05S60C

Infineon Technologies
Part Number IDC05S60C
Manufacturer Infineon Technologies
Description 2nd generation thinQ! SiC Schottky Diode
Published Aug 25, 2006
Detailed Description www.DataSheet4U.com IDC05S60C 2nd generation thinQ!TM SiC Schottky Diode FEATURES: • • • • • • Revolutionary semiconduc...
Datasheet PDF File IDC05S60C PDF File

IDC05S60C
IDC05S60C

Overview
www.
DataSheet4U.
com IDC05S60C 2nd generation thinQ!TM SiC Schottky Diode FEATURES: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery High surge current capability Applications: • SMPS, PFC, snubber C A Chip Type IDC05S60C VBR 600V IF 5A Die Size 1.
45 x 1.
162 mm2 Package sawn on foil MECHANICAL PARAMETER: Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Anode metalization Cathode metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment DataSheet4U.
com 1.
45x 1.
162 mm 1.
213 x 0.
925 1.
68 / 1.
22 355 75 0 2182 pcs Photoimide 3200 nm Al mm µm mm deg 2 DataSh ee 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, ≤ 350µm ∅ ≥ 0.
3 mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C DataSheet4U.
com Edited by INFINEON Technologies, AIM PMD D CID CLS, Edition 1, 05.
04.
2006 DataSheet 4 U .
com www.
DataSheet4U.
com IDC05S60C Maximum Ratings Parameter Repetitive peak reverse voltage DC blocking voltage Continuous forward current limited by Tjmax Surge non repetitive forward current sine halfwave Symbol V RRM V DC IF IF,SM I F,RM I F,max Tj , Ts t g Condition Value 600 600 5 Unit V TC =25° C, tP =10 ms TC = 100 ° C, T j = 1 5 0 ° C, D=0.
1 TC =25° C, tp=10µs 42 21 180 -55.
.
.
+175 A Repetitive peak forward current limited by Tjmax Non-repetitive peak forward current Operating junction and storage temperature °C Static Electrical Characteristics (tested on chip), Tj=25 °C, unless otherwise specified Value min.
Typ.
0.
6 1.
5 max.
70 1.
7 m et4U.
co Parameter Reverse current Diode forward voltage Symbol IR VF DataSheet4U.
com Conditions V R =600V I F = 5A Tj= 2 5 ° C Tj= 2 5 ° C Unit µA V DataSh ee Dynamic Electrical Ch...


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