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IRF40N03

ETC
Part Number IRF40N03
Manufacturer ETC
Description N-CHANNEL Power MOSFET
Published Aug 27, 2006
Detailed Description www.DataSheet4U.com IRF40N03 N-CHANNEL Power MOSFET ORDERING INFORMATION Part Number Package IRF40N...
Datasheet PDF File IRF40N03 PDF File

IRF40N03
IRF40N03

Overview
www.
DataSheet4U.
com IRF40N03 N-CHANNEL Power MOSFET ORDERING INFORMATION Part Number Package IRF40N03.
TO-220 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25к.
cIRF40N03 Characteristic OFF Characteristics Drain-to-Source Breakdown Voltage (VGS = 0 V, ID = 250 µA) Breakdown Voltage Temperature Coefficient (Reference to 25к, ID = 1mA) Drain-to-Source Leakage Current (VDS = 30 V, VGS = 0 V, TJ = 25к) (VDS = 24 V, VGS = 0 V, TJ = 150к) Gate-to-Source Forward Leakage (VGS = 20 V) Gate-to-Source Reverse Leakage (VGS = -20 V) ON Characteristics Gate Threshold Voltage (VDS = VGS, ID = 250 µA) Static Drain-to-Source On-Resistance (VGS = 10 V, ID = 20A) Forward Transconductance (VDS = 10 V, ID = 20A) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (VGS = 10 V) Gate-to-Source Charge Gate-to-Drain (“Miller”) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge (IS = 40 A, VGS = 0 V) (IF = 40A, VGS = 0 V, di/dt = 100A/µs) Integral pn-diode in MOSFET ISM VSD trr Qrr .
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Symbol Min Typ Max Units VDSS ӔVDSS/ǻTJ IDSS 30 0.
037 .
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V V/к µA 1 25 IGSS IGSS 100 -100 nA nA VGS(th) (Note 4) 1.
0 2.
0 3.
0 V mȍ DataSheet4U.
com (Note 4) Dynamic Characteristics RDS(on) 14 gFS Ciss Coss Crss Qg Qgs Qgd 26 .
800 380 133 17 3 .
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10 7.
2 60 22.
5 10 40 170 1.
3 55 110 .
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DataShe e 17 S pF pF pF nC nC nC ns ns ns .
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ns A A V ns nC (VDS = 25 V, VGS = 0 V, f = 1.
0 MHz) (VDS = 24 V, ID = 20 A, VGS = 5 V) (Note 5) Resistive Switching Characteristics (VDS = 15 V, ID = 20 A, VGS = 10 V, RG = 3.
3ȍ) (Note 5) td(on) trise td(off) tfall IS .
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Source-Drain Diode Characteristics Note 1: TJ = +25к to 150к Note 2: Repetitive rating; ...


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