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TC59SM816CFTI

Toshiba
Part Number TC59SM816CFTI
Manufacturer Toshiba
Description SDRAM
Published Aug 27, 2006
Detailed Description www.DataSheet4U.com TC59SM816CFTI-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304...
Datasheet PDF File TC59SM816CFTI PDF File

TC59SM816CFTI
TC59SM816CFTI

Overview
www.
DataSheet4U.
com TC59SM816CFTI-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59SM816CFTI is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4 banks × 16 bits.
Fully synchronous operations are referenced to the positive edges of clock input and can transfer data up to 133M words per second.
These devices are controlled by commands setting.
Each bank are kept active so that DRAM core sense amplifiers can be used as a cache.
The refresh functions, either Auto Refresh or Self Refresh are easy to use.
By having a programmable Mode Register, the system can choose the most suitable modes which will maximize its performance.
These devices are ideal for main memory in applications such as work-stations.
FEATURES PARAMETER -75 tCK Clock Cycle Time (min) 7.
5 ns 45 ns 5.
4 ns 65 ns 75 mA 95 mA 3 mA TC59SM816 -80 8 ns 48 ns 6 ns 68 ns 70 mA 90 mA 3 mA tRAS Acti...


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