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AT42070

Agilent(Hewlett-Packard)
Part Number AT42070
Manufacturer Agilent(Hewlett-Packard)
Description Up to 6 GHz Medium Power Silicon Bipolar Transistor
Published Sep 4, 2006
Detailed Description Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typi...
Datasheet PDF File AT42070 PDF File

AT42070
AT42070

Overview
Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.
0 dBm Typical P1 dB at 2.
0␣ GHz 20.
5 dBm Typical P1 dB at 4.
0␣ GHz • High Gain at 1 dB Compression: 15.
0 dB Typical G1 dB at 2.
0␣ GHz 10.
0 dB Typical G1 dB at 4.
0␣ GHz • Low Noise Figure: 1.
9 dB Typical NFO at 2.
0␣ GHz • High Gain-Bandwidth Product: 8.
0 GHz Typical fT • Hermetic Gold-ceramic Microstrip Package different functions.
The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications.
This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies.
An optimum noise match near 50␣ Ω up to 1 GHz, makes this device easy to use as a low noise amplifier.
The AT-42070 bipolar transistor is fabricated using Hewlett-Packard’s 10 GHz fT Self-Aligned-Transistor (SAT) process.
The die is nitride passivat...


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