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2SK3760

Toshiba Semiconductor
Part Number 2SK3760
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Sep 4, 2006
Detailed Description www.DataSheet4U.com 2SK3760 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS‡Y ) 2SK3760 unit•F‚•‚• ...
Datasheet PDF File 2SK3760 PDF File

2SK3760
2SK3760

Overview
www.
DataSheet4U.
com 2SK3760 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS‡Y ) 2SK3760 unit•F‚•‚• Switching Regulator Applications 3.
84•} 0 .
2 3.
84•}0.
2 10.
5 10.
5max max 4.
7max 4.
7 max 1.
3 6.
6 max 6.
6 max.
1.
3 • • • • Low drain-source ON resistance: R DS (ON) = 1.
7Ħ (typ.
) High forward transfer admittance: |Yfs| = 2.
5S (typ.
) Low leakage current: IDSS = 100 ƒÊ A (V DS = 600 V) Enhancement-mode: V th = 2.
0~4.
0 V (V DS = 10 V, ID = 1 mA) 13.
4 13.
4min min.
3.
9 max 3.
9 max.
Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ ) Gate-source voltage DC Drain current (Note 1) Symbol V DSS V DGR V GSS ID IDP PD EA S IAR EA...


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