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SSP2N60A

Fairchild Semiconductor
Part Number SSP2N60A
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published Sep 16, 2006
Detailed Description www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input...
Datasheet PDF File SSP2N60A PDF File

SSP2N60A
SSP2N60A

Overview
www.
DataSheet4U.
com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.
) @ VDS = 600V Lower RDS(ON) : 3.
892 Ω (Typ.
) 1 2 3 SSP2N60A BVDSS = 600 V RDS(on) = 5.
0 Ω ID = 2 A TO-220 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=...


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